SN74AUC2G04DBVR

800mV~2.7V 1.5ns@2.5V,30pF 10uA 2 SOT-23-6 Gates and Inverters RoHS

SOT-23-6ROHS3 CompliantActive

DUAL INVERTER GATE

Manufacturer: TI
Manufacturer part #: SN74AUC2G04DBVR
Store part #: C2864334
Package / case: SOT-23-6
Category: Gates and Inverters
Packaging: Tape & Reel (TR)

Datasheet (PDF)

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1,056 in stock

#C2864334

Stock & price checked 15 h ago

Quantity	Unit price	Pack price
1+	₹67.87	₹67.87
10+	₹57.46	₹574.60
30+	₹49.88	₹1,496.40
100+	₹44.02	₹4,402.00
500+	₹42.07	₹21,035.00
1,000+	₹40.76	₹40,760.00

Quantity (min 1)

1 × ₹67.87

₹67.87

excl. GST

₹80.09 incl. 18% GST

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Standard pack: 3,000 per reel

SN74AUC2G04DBVR

₹67.87 for 1 + GST

Specifications

Logic Family: 74AUC
Voltage - Supply: 800mV~2.7V
Propagation Delay: 1.5ns@2.5V,30pF
Features: Power shutdown protection
Input Logic Level - Low: 0V~700mV
Input Logic Level - High: 1.7V
Operating Temperature: -40℃~+85℃
Quiescent Current(Iq): 10uA
Number of Channels: 2
Current - Output High(IOH): 9mA
Current - Output Low(IOL): 9mA

Packaging & compliance

RoHS: ROHS3 Compliant
Lifecycle: Active
Moisture sensitivity: MSL 1 (unlimited)
ECCN: EAR99
Packaging: Tape & Reel (TR)
Standard pack: 3,000 / Reel
Sold per: Piece
Minimum order: 1
Unit weight: 0.081 g

Overview

This dual inverter is operational at 0.8 V to 2.7 VCC, but is designed specifically for 1.65-V to 1.95-V VCC operation. The SN74AUC2G04 performs the Boolean function Y = A(overline). NanoStar and NanoFree package technology is a major breakthrough in IC packaging concepts, using the die as the package. This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.

Key features

Available in the Texas Instruments NanoStar and NanoFree Packages
Optimized for 1.8-V Operation and Is 3.6-V I/O Tolerant to Support Mixed-Mode Signal Operation
Ioff Supports Partial-Power-Down Mode Operation
Sub 1-V Operable
Max tpd of 1.7 ns at 1.8 V
Low Power Consumption, 10 μA at 1.8 V
±8 mA Output Drive at 1.8 V
Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101)

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