SN74CB3Q3384APWR

The SN74CB3Q3384A is a high-bandwidth FET bus switch that uses a charge pump to boost the gate voltage of the transmission transistors, providing a low and flat on-resistance (ron). The low and flat on-resistance enables minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. The SN74CB3Q3384A is specifically designed to support high-bandwidth applications, offering an optimized interface solution that is well-suited for broadband communications, networking, and data-intensive computing systems. The SN74CB3Q3384A is organized as two 5-bit bus switches with independent output enable (1OE, 2OE) inputs. It can be used as two 5-bit bus switches or one 10-bit bus switch. When OE is low, the associated 5-bit bus switch is in the on state, connecting Port A to Port B and allowing bidirectional data flow between the ports. When OE is high, the associated 5-bit bus switch is in the off state, with a high-impedance state between Ports A and B. The device fully supports partial power-down applications using IOFF. The IOFF circuitry prevents damaging current backflow through the device when the power is off. The device has isolation functionality when the power is off. To ensure a high-impedance state during power-up or power-down, OE should be connected to VCC through a pull-up resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

Applications

• PCI interface
• Differential signal interface
• Memory interleaving
• Bus isolation
• Low-distortion signal gating

Key features

• High-bandwidth data path (up to 500 MHz)
• 5V-tolerant I/O regardless of device power state
• Low and flat on-state resistance (ron = 3 Ω typical)
• Rail-to-rail switching on data I/O ports
• Supports 0 to 5V switching at 3.3V Vcc
• Supports 0 to 3.3V switching at 2.5V VCC
• Bidirectional data flow with near-zero propagation delay
• Low I/O capacitance minimizes loading and signal distortion (Cio(OFF) = 4 pF typical)
• Fast switching frequency (fOE = 20 MHz maximum)
• Undervoltage clamp diodes on data and control inputs
• Low power consumption (Icc = 1 mA typical)
• Vcc operating range: 2.3 V to 3.6 V
• Data I/O supports signal levels from 0 to 5V (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
• Control inputs driven by TTL or 5V/3.3V CMOS outputs
• Ioff supports partial power-down operation
• Latch-up performance exceeds 100 mA per JESD 78, Class II
• ESD performance tested per JESD 22
• 2000V Human Body Model (A114-B, Class II)
• 1000V Charged Device Model (C101)
• Supports digital and analog applications: PCI interface, differential signaling, memory interleaving, bus isolation, low-distortion signal gating