MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock

650V 4.5A 50W Through Hole TO-251-3
MOSFET 650V 4.5A TO-251-3
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
10 in stock
#C2841884
Stock & price checked 31 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹194.31 | ₹194.31 |
| 10+ | ₹168.09 | ₹1,680.90 |
| 30+ | ₹153.47 | ₹4,604.10 |
| 75+ | ₹137.14 | ₹10,285.50 |
| 525+ | ₹130.04 | ₹68,271.00 |
| 975+ | ₹126.61 | ₹1,23,444.75 |
1 × ₹194.31
₹194.31
excl. GST
₹229.29 incl. 18% GST
SPU04N60C3
₹194.31 for 1 + GST
ME2309 is a P-channel logic-level enhancement-mode power MOSFET fabricated using high cell density DMOS trench technology. This high-density process is specifically designed to minimize on-resistance. These devices are particularly suited for low-voltage applications such as power management in mobile phones and laptops, as well as other battery-powered circuits requiring high-side switching and low inline power dissipation in compact surface-mount packages.
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
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![]() | CMU80R1K2#C39840893Cmos · TO-251 | Cmos | TO-251 | 24 | ₹60.50 · 24 in stock | View |
![]() | IPU80R900P7#C531230Infineon · TO-251-3 | Infineon | TO-251-3 | 13 | ₹199.47 · 13 in stock | View |
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Same category
MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock