MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
26,12,850 in stock
HXY MOSFETDatasheet (PDF)
SQD50N06-09L_GE3-HXY
N-Channel 60V 80A 100W Surface Mount TO-252-2L
TO-252-2LRoHSActive
MOSFET N-CH 60V 80A TO-252-2L
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- SQD50N06-09L_GE3-HXY
- Store part #
- C22366672
- Package / case
- TO-252-2L
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
7 in stock
#C22366672
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹200.58 | ₹200.58 |
| 10+ | ₹165.86 | ₹1,658.60 |
| 30+ | ₹146.80 | ₹4,404.00 |
| 100+ | ₹125.37 | ₹12,537.00 |
| 500+ | ₹115.72 | ₹57,860.00 |
| 1,000+ | ₹111.44 | ₹1,11,440.00 |
1 × ₹200.58
₹200.58
excl. GST
₹236.68 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 2,500 per reel
SQD50N06-09L_GE3-HXY
₹200.58 for 1 + GST
Specifications
- Configuration
- Standalone
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 60V
- Output Capacitance(Coss)
- 260pF
- Current - Continuous Drain(Id)
- 80A
- Ciss-Input Capacitance
- 2.68nF
- Pd - Power Dissipation
- 100W
- Reverse Transfer Capacitance (Crss)
- 180pF
- RDS(on)
- 6mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 33nC@4.5V
- Gate Threshold Voltage (Vgs(th))
- 1.4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,500 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 1.129 g
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