MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
Hangzhou Silan Microelectronics
SVS60R190FJDD4
N-Channel 600V 20A 25W Through Hole TO-220FJD-3L
TO-220FJD-3LRoHSActive
MOSFET N-CH 600V 20A TO-220FJD-3L
- Manufacturer
- Hangzhou Silan Microelectronics
- Manufacturer part #
- SVS60R190FJDD4
- Store part #
- C42459727
- Package / case
- TO-220FJD-3L
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
100 in stock
#C42459727
Stock & price checked 2 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹179.93 | ₹179.93 |
| 10+ | ₹148.85 | ₹1,488.50 |
| 50+ | ₹131.69 | ₹6,584.50 |
| 100+ | ₹112.35 | ₹11,235.00 |
| 500+ | ₹103.87 | ₹51,935.00 |
| 1,000+ | ₹99.97 | ₹99,970.00 |
1 × ₹179.93
₹179.93
excl. GST
₹212.32 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
SVS60R190FJDD4
₹179.93 for 1 + GST
Specifications
- Drain to Source Voltage
- 600V
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 20A
- Output Capacitance(Coss)
- 53pF
- Ciss-Input Capacitance
- 1.177nF
- Pd - Power Dissipation
- 25W
- Reverse Transfer Capacitance (Crss)
- 1.1pF
- RDS(on)
- 190mΩ@10V
- Gate Charge(Qg)
- 31nC@10V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.32 g
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