MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
26,12,850 in stock
Hangzhou Silan Microelectronics
SVSP65R110P7HD4
N-Channel 650V 35A 278W Through Hole TO-247-3L
TO-247-3LRoHSActive
MOSFET N-CH 650V 35A TO-247-3L
- Manufacturer
- Hangzhou Silan Microelectronics
- Manufacturer part #
- SVSP65R110P7HD4
- Store part #
- C42459733
- Package / case
- TO-247-3L
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
5 in stock
#C42459733
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹291.18 | ₹291.18 |
| 10+ | ₹244.69 | ₹2,446.90 |
| 30+ | ₹215.57 | ₹6,467.10 |
| 90+ | ₹185.79 | ₹16,721.10 |
| 510+ | ₹172.32 | ₹87,883.20 |
| 990+ | ₹166.46 | ₹1,64,795.40 |
1 × ₹291.18
₹291.18
excl. GST
₹343.59 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 30 per tube
SVSP65R110P7HD4
₹291.18 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 650V
- Current - Continuous Drain(Id)
- 35A
- Output Capacitance(Coss)
- 83pF
- Ciss-Input Capacitance
- 3.01nF
- Pd - Power Dissipation
- 278W
- Reverse Transfer Capacitance (Crss)
- 5.4pF
- RDS(on)
- 110mΩ@10V
- Gate Charge(Qg)
- 80nC@10V
- Gate Threshold Voltage (Vgs(th))
- 5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 7.877 g
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