MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
26,12,850 in stock
TOSHIBADatasheet (PDF)
TK6A80E,S4X(S
N-Channel 800V 6A 18W Through Hole TO-220SIS
TO-220SISRoHSActive
MOSFET N-CH 800V 6A TO-220SIS
- Manufacturer
- TOSHIBA
- Manufacturer part #
- TK6A80E,S4X(S
- Store part #
- C22413233
- Package / case
- TO-220SIS
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
4,997 in stock
#C22413233
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹87.82 | ₹87.82 |
| 10+ | ₹70.69 | ₹706.90 |
| 50+ | ₹62.23 | ₹3,111.50 |
| 100+ | ₹53.78 | ₹5,378.00 |
| 500+ | ₹48.79 | ₹24,395.00 |
| 1,000+ | ₹46.19 | ₹46,190.00 |
1 × ₹87.82
₹87.82
excl. GST
₹103.63 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 50 per tube
TK6A80E,S4X(S
₹87.82 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 110pF
- Ciss-Input Capacitance
- 1.35nF
- Pd - Power Dissipation
- 18W
- Drain to Source Voltage
- 800V
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 6A
- Reverse Transfer Capacitance (Crss)
- 10pF
- RDS(on)
- 1.7Ω@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 32nC@10V
- Vgs
- ±30V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 1 (unlimited)
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.718 g
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