Varnitronics
TP2104N3-G MICROCHIP
MICROCHIP

TP2104N3-G

740mW 40V 175mA 6Ω@10V 1 P-Channel P-Channel TO-92-3 Single FETs, MOSFETs RoHS

TO-92-3ROHS3 CompliantActive
Manufacturer
MICROCHIP
Manufacturer part #
TP2104N3-G
Store part #
C632588
Package / case
TO-92-3
Packaging
Bag-packed
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

33 in stock

#C632588

Stock & price checked 5 days ago

QuantityUnit pricePack price
1+₹191.52₹191.52
10+₹188.29₹1,882.90
30+₹186.36₹5,590.80
100+₹184.21₹18,421.00

1 × ₹191.52

₹191.52

excl. GST

₹225.99 incl. 18% GST

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  • GST invoice with every order
  • Standard pack: 1,000 per bag

TP2104N3-G

₹191.52 for 1 + GST

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Specifications

Output Capacitance(Coss)
22pF
Ciss-Input Capacitance
60pF
Pd - Power Dissipation
740mW
Operating Temperature
-55℃~+150℃
Drain to Source Voltage
40V
Current - Continuous Drain(Id)
175mA
Reverse Transfer Capacitance (Crss)
10pF
RDS(on)
6Ω@10V
Number
1 P-Channel
Vgs
±20V
Gate Threshold Voltage (Vgs(th))
2V
Type
P-Channel

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Bag-packed
Standard pack
1,000 / Bag
Sold per
Piece
Minimum order
1
Unit weight
0.32 g

Overview

The TP2104 low-threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and a well-established silicon-gate manufacturing process. This combination yields a device that offers the power-handling capability of bipolar transistors along with the inherently high input impedance and positive temperature coefficient characteristics of MOS devices. As with all MOS structures, this device is immune to thermal runaway and thermally induced second breakdown. Microchip's vertical DMOS FETs are ideal for a wide range of switching and amplification applications requiring very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speed.

Applications

  • Logic level interface (TTL and CMOS compatible)
  • Solid-state relay
  • Analog switch
  • Power management
  • Telecom switch

Key features

  • High input impedance and high gain
  • Low gate drive power requirement
  • Easy parallel operation
  • Low input capacitance (CISS) and fast switching speed
  • Excellent thermal stability
  • Integrated body diode
  • No secondary breakdown

Alternatives

Similar parts — check the datasheet before substituting.

TP2104N3-G-P003#C629202MICROCHIP · TO-92-3₹231.27 · 499 in stockView
ZVP4424ASTZ#C3277950DIODES · TO-92₹132.54 · 10 in stockView
TP0604N3-G#C632585MICROCHIP · TO-92-3₹252.07 · 2 in stockView
ZVP2106ASTZ#C780910DIODES · TO-92-3₹75.85 · 0 in stockView
TP2640N3-G#C632592MICROCHIP · TO-92-3₹670.97 · 4 in stockView

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