MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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ChipNoboDatasheet (PDF)
TP65H070G4LSGB-TR-CN
650V 18.9A 65.8W 92mΩ 1 N-channel N-Channel DFN-8(8x8) Single FETs, MOSFETs
DFN-8(8x8)RoHSActive
650V GaN FET
- Manufacturer
- ChipNobo
- Manufacturer part #
- TP65H070G4LSGB-TR-CN
- Store part #
- C42436707
- Package / case
- DFN-8(8x8)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
2 in stock
#C42436707
Stock & price checked 45 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹730.36 | ₹730.36 |
| 10+ | ₹629.95 | ₹6,299.50 |
| 30+ | ₹569.04 | ₹17,071.20 |
| 100+ | ₹517.78 | ₹51,778.00 |
1 × ₹730.36
₹730.36
excl. GST
₹861.82 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
TP65H070G4LSGB-TR-CN
₹730.36 for 1 + GST
Specifications
- Drain to Source Voltage
- 650V
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 18.9A
- Output Capacitance(Coss)
- 53pF
- Ciss-Input Capacitance
- 818pF
- Technology
- E-mode
- Pd - Power Dissipation
- 65.8W
- Reverse Transfer Capacitance (Crss)
- 3.6pF
- RDS(on)
- 92mΩ
- Number
- 1 N-channel
- Gate Charge(Qg)
- 14.4nC
- Type
- N-Channel
- Gate Threshold Voltage (Vgs(th))
- 3.65V
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.638 g
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