MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
TOSHIBADatasheet (PDF)
TPW1R104PB,L1XHQ
40V 120A 132W 0.95mΩ@10V 1 N-channel N-Channel DSOPADVANCE-8 Single FETs, MOSFETs RoHS
DSOPADVANCE-8ROHS3 CompliantActive
Silicon N-channel MOS (U-MOSIX-H) MOSFETs
- Manufacturer
- TOSHIBA
- Manufacturer part #
- TPW1R104PB,L1XHQ
- Store part #
- C6290618
- Package / case
- DSOPADVANCE-8
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
46 in stock
#C6290618
Stock & price checked 7 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹133.35 | ₹133.35 |
| 10+ | ₹129.05 | ₹1,290.50 |
| 30+ | ₹126.16 | ₹3,784.80 |
| 100+ | ₹123.09 | ₹12,309.00 |
1 × ₹133.35
₹133.35
excl. GST
₹157.35 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
TPW1R104PB,L1XHQ
₹133.35 for 1 + GST
Specifications
- Drain to Source Voltage
- 40V
- Current - Continuous Drain(Id)
- 120A
- Output Capacitance(Coss)
- 2.94nF
- Ciss-Input Capacitance
- 4.56nF
- Pd - Power Dissipation
- 132W
- Reverse Transfer Capacitance (Crss)
- 320pF
- RDS(on)
- 0.95mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 55nC@10V
- Gate Threshold Voltage (Vgs(th))
- 3V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- Moisture sensitivity
- MSL 1 (unlimited)
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.161 g
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