ZD25LD40BTIGT

The ZD25LD40B is a serial interface Flash memory device designed for use in a wide variety of high-volume consumer based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the device, with its page erase granularity it is ideal for data storage as well, eliminating the need for additional data storage devices. The erase block sizes of the device have been optimized to meet the needs of today's code and data storage applications. By optimizing the size of the erase blocks, the memory space can be used much more efficiently. Because certain code modules and data storage segments must reside by themselves in their own erase regions, the wasted and unused memory space that occurs with large sectored and large block erase Flash memory devices can be greatly reduced. This increased memory space efficiency allows additional code routines and data storage segments to be added while still maintaining the same overall device density. The device also contains an additional 3*512 -byte security registers with OTP lock (One-Time Programmable), can be used for purposes such as unique device serialization, system-level Electronic Serial Number (ESN) storage, locked key storage, etc. Specifically designed for use in many different systems, the device supports read, program, and erase operations with a wide supply voltage range of 1.65V to 2.1V. No separate voltage is required for programming and erasing.

Key features

• Wide Supply Range from 1.65 to 2.1V for Read, Erase and Program
• Ultra Low Power consumption for Read, Erase and Program
• X1 and X2 Multi I/O Support
• High reliability with 100K cycling and 20 Year-retention
• Single 1.65V to 2.1V supply for Read, Erase and Program Operations
• Industrial Temperature Range -40C to 85C
• Serial Peripheral Interface (SPI) Compatible: Mode 0 and Mode 3
• Single and Dual IO mode 4M x 1 bit 2M x 2bits
• Flexible Architecture for Code and Data Storage
• Uniform 256-byte Page Program
• Uniform 256-byte Page Erase
• Uniform 4K-byte Sector Erase
• Uniform 32K/64K-byte Block Erase
• Full Chip Erase
• Fast read 2 I/O 104MHz with 4 dummy cycles，equivalent to 208M 1 I/O 104MHz with 8 dummy cycles
• Fast Program and Erase Speed
• 1.3ms Page program time
• 10ms Page erase time
• 10ms 4K-byte sector erase time
• 10ms 32K-byte block erase time
• 10ms 64K-byte block erase time
• Ultra Low Power Consumption
• 0.1uA Deep Power Down current
• 9uA Standby current
• 0.6mA Active Read current at 33MHz
• 1.8mA Active Program or Erase current
• High Reliability 100,000 Program / Erase Cycles 20-year Data Retention
• One Time Programmable (OTP) Security Register 3*512 -Byte Security Registers With OTP Lock
• Software Protection Mode The BlockProtect (BP4,BP3,BP2,BP1,andBP0) bits define the section of the memory array that can be read but not change.
• 128 bit unique ID for each device
• JEDEC Standard Manufacturer and Device ID Read Methodology
• Hardware Protection Mode Hardware Controlled Locking of Protected Sectors by WP Pin
• Industry Standard Green Package Options
• 8-PACKAGE SOP (150mil/208mil)
• 8-PACKAGE USON (3x2x0.55mm)
• 8-PACKAGE USON (3x2x0.50mm)
• 8-PACKAGE USON (1.5x1.5x0.55mm)