MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
HANGYU MICROELECTRONICSDatasheet (PDF)
10N65
650V 10A 50W 800mΩ@10V 1 N-channel N-Channel TO-220F Single FETs, MOSFETs
TO-220FRoHSActive
- Manufacturer
- HANGYU MICROELECTRONICS
- Manufacturer part #
- 10N65
- Store part #
- C55079894
- Package / case
- TO-220F
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
35 in stock
#C55079894
Stock & price checked 2 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 5+ | ₹49.60 | ₹248.00 |
| 50+ | ₹40.75 | ₹2,037.50 |
| 150+ | ₹36.95 | ₹5,542.50 |
| 500+ | ₹32.22 | ₹16,110.00 |
| 2,000+ | ₹30.11 | ₹60,220.00 |
| 5,000+ | ₹28.84 | ₹1,44,200.00 |
5 × ₹49.60
₹248.00
excl. GST
₹292.64 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
10N65
₹248.00 for 5 + GST
Specifications
- Drain to Source Voltage
- 650V
- Current - Continuous Drain(Id)
- 10A
- Output Capacitance(Coss)
- 166pF
- Ciss-Input Capacitance
- 1.57nF
- Pd - Power Dissipation
- 50W
- Reverse Transfer Capacitance (Crss)
- 18pF
- RDS(on)
- 800mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 44nC
- Vgs
- ±30V
- Gate Threshold Voltage (Vgs(th))
- 3V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 1 (unlimited)
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 5 (multiples of 5)
- Unit weight
- 2.646 g
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