Varnitronics
25LC512-E/MF MICROCHIP
MICROCHIP

25LC512-E/MF

512Kbit 20MHz SPI DFN-8-EP(5x6) Memory RoHS

DFN-8-EP(5x6)ROHS CompliantActive

512-Kbit SPI Bus Serial EEPROM

Manufacturer
MICROCHIP
Manufacturer part #
25LC512-E/MF
Store part #
C612352
Package / case
DFN-8-EP(5x6)
Category
Memory
Packaging
Tube-packed
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

15 in stock

#C612352

Stock & price checked 34 h ago

QuantityUnit pricePack price
1+₹586.98₹586.98
10+₹573.84₹5,738.40
30+₹565.23₹16,956.90
100+₹556.40₹55,640.00

1 × ₹586.98

₹586.98

excl. GST

₹692.64 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 60 per tube

25LC512-E/MF

₹586.98 for 1 + GST

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Specifications

Operating Temperature
-40℃~+125℃
Features
Hardware write protection function;Built-in write enable latch (WEL);Power-down/Power-up protection circuit
Memory Size
512Kbit
Voltage - Supply
2.5V~5.5V;10mA
Clock Frequency
20MHz
Data Retention - TDR (Year)
200 Years
Write Cycle Time(tWC)
5ms
Standby Supply Current
20uA
Interface
SPI
Write Cycle Endurance
1,000,000 cycles

Packaging & compliance

RoHS
ROHS Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tube-packed
Standard pack
60 / Tube
Sold per
Piece
Minimum order
1
Unit weight
0.293 g

Overview

The 25LC512 is a 512-Kbit serial EEPROM memory with byte-level and page-level serial EEPROM functions. It also features Page, Sector and Chip erase functions typically associated with Flash-based products. These functions are not required for byte or page write operations. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled by a Chip Select (CS) input. Communication to the device can be paused via the hold pin (HOLD). While the device is paused, transitions on its inputs will be ignored, with the exception of Chip Select, allowing the host to service higher priority interrupts.

Key features

  • 20 MHz maximum Clock Speed
  • Byte and Page-level Write Operations:
  • 128-byte page
  • 5 ms maximum
  • No page or sector erase required
  • Low-Power CMOS Technology:
  • Max. Write current: 7 mA at 5.5V
  • Max. Read current: 10 mA at 5.5V, 20 MHz
  • Standby current: 1 μA at 2.5V, 85℃ (Deep power-down)
  • Electronic Signature for Device ID
  • Self-Timed Erase and Write cycles:
  • Page Erase (5 ms, typical)
  • Sector Erase (10 ms/sector, typical)
  • Bulk Erase (10 ms, typical)
  • Sector Write Protection (16K byte/sector):
  • Protect none, 1/4, 1/2 or all of array
  • Built-In Write Protection:
  • Power-on/off data protection circuitry
  • Write enable latch
  • Write-protect pin
  • Sequential Read
  • High Reliability:
  • Endurance: 1 Million erase/write cycles
  • Data Retention: > 200 years
  • ESD Protection: > 4000V
  • Temperature Ranges Supported:
  • Industrial (I): -40℃ to +85℃
  • Extended (E): -40℃ to +125℃
  • RoHS Compliant
  • Automotive AEC-Q100 Qualified

Alternatives

Similar parts — check the datasheet before substituting.

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