6EDL04I06PT

13V~17.5V 375mA 165mA SO-28-300mil Gate Drivers RoHS

SO-28-300milROHS3 CompliantActive

200 V and 600 V three-phase gate driver with Over Current Protection (OCP), Enable (EN), Fault and Integrated Bootstrap Diode (BSD)

Manufacturer: Infineon
Manufacturer part #: 6EDL04I06PT
Store part #: C533113
Package / case: SO-28-300mil
Category: Gate Drivers
Packaging: Tape & Reel (TR)

Datasheet (PDF)

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4,826 in stock

#C533113

Stock & price checked 7 days ago

Quantity	Unit price	Pack price
1+	₹222.52	₹222.52
10+	₹187.10	₹1,871.00
30+	₹167.76	₹5,032.80
100+	₹130.17	₹13,017.00
500+	₹120.39	₹60,195.00
1,000+	₹116.04	₹1,16,040.00

Quantity (min 1)

1 × ₹222.52

₹222.52

excl. GST

₹262.57 incl. 18% GST

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Standard pack: 1,000 per reel

6EDL04I06PT

₹222.52 for 1 + GST

Specifications

Input Logic Level - Low: 700mV~1.1V
Low Level Delay Time: 530ns
High Level Delay Time: 530ns
Quiescent Current: 1.3mA
Input Logic Level - High: 1.7V~2.4V
Voltage - Supply: 13V~17.5V
Operating Temperature: -40℃~+105℃
Driven Configuration: Three Phase
Current - Output Low(IOL): 375mA
Rise Time: 60ns
Fall Time: 26ns
Features: Enable shutdown;Dead-time control;Interleaved conduction protection;Built-in bootstrap diode
Current - Output High(IOH): 165mA
Load Type: IGBT

Packaging & compliance

RoHS: ROHS3 Compliant
Lifecycle: Active
ECCN: EAR99
Packaging: Tape & Reel (TR)
Standard pack: 1,000 / Reel
Sold per: Piece
Minimum order: 1
Unit weight: 1.35 g

Overview

The device 6ED family – 2nd generation is a full bridge driver to control power devices like MOS-transistors or IGBTs in 3-phase systems with a maximum blocking voltage of +600 V. Based on the used SOI-technology there is an excellent ruggedness on transient voltages. No parasitic thyristor structures are present in the device. Hence, no parasitic latch-up may occur at all temperatures and voltage conditions. The six independent drivers are controlled at the low-side using CMOS resp. LSTTL compatible signals, down to 3.3 V logic. The device includes an under-voltage detection unit with hysteresis characteristic and an overcurrent detection. The over-current level is adjusted by choosing the resistor value and the threshold level at pin ITRIP. Both error conditions (under-voltage and over-current) lead to a definite shut down off all six switches. An error signal is provided at the FAULT open drain output pin. The blocking time after over-current can be adjusted with an RC-network at pin RCIN. The input RCIN owns an internal current source of 2.8 μA. Therefore, the resistor RRCIN is optional. The typical output current can be given with 165 mA for pull-up and 375 mA for pull down. Because of system safety reasons a 310 ns interlocking time has been realised. The function of input EN can optionally be extended with over-temperature detection, using an external NTC resistor. The monolithic integrated bootstrap diode structures between pins VCC and VBx can be used for power supply of the high side.

Applications

Home appliance, refrigeration compressors, air-conditioning
Fans, pumps
Motor drives, general purpose inverters
Power tools, light electric vehicles

Key features

Infineon thin-film-SOI-technology Maximum blocking voltage +600 V
Output source/sink current +0.165 A/-0.375 A
Integrated ultra-fast, low RDS(0N) Bootstrap Diode
Insensitivity of the bridge output to negative transient voltages up to -50 V given by SOI technology
Separate control circuits for all six drivers
Detection of over current and under voltage supply
Externally programmable delay for fault clear after over current detection
'Shut down' of all switches during error conditions
CMOS and LSTTL compatible input (negative logic)
Signal interlocking of every phase to prevent cross conduction