MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
26,12,850 in stock
ANHIDatasheet (PDF)
ASW65R038EFD
N-Channel 655V 80A 500W Through Hole TO-247
TO-247RoHSActive
MOSFET N-CH 655V 80A TO-247
- Manufacturer
- ANHI
- Manufacturer part #
- ASW65R038EFD
- Store part #
- C19192888
- Package / case
- TO-247
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
46 in stock
#C19192888
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹725.12 | ₹725.12 |
| 10+ | ₹624.73 | ₹6,247.30 |
| 25+ | ₹564.97 | ₹14,124.25 |
| 100+ | ₹504.57 | ₹50,457.00 |
| 500+ | ₹476.76 | ₹2,38,380.00 |
| 1,000+ | ₹464.15 | ₹4,64,150.00 |
1 × ₹725.12
₹725.12
excl. GST
₹855.64 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 25 per tube
ASW65R038EFD
₹725.12 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 655V
- Output Capacitance(Coss)
- 169pF
- Current - Continuous Drain(Id)
- 80A
- Ciss-Input Capacitance
- 6.033nF
- Pd - Power Dissipation
- 500W
- Reverse Transfer Capacitance (Crss)
- 12.1pF
- RDS(on)
- 38mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 158.2nC@10V
- Gate Threshold Voltage (Vgs(th))
- 5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tube-packed
- Standard pack
- 25 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 7.948 g
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