MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹1.93
26,12,850 in stock
FUXINSEMIDatasheet (PDF)
C2M0080120D
1.2kV 36A 192W 98mΩ 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs
TO-247-3RoHSActive
Silicon Carbide Power MOSFET N-Channel Enhancement Mode
- Manufacturer
- FUXINSEMI
- Manufacturer part #
- C2M0080120D
- Store part #
- C22365189
- Package / case
- TO-247-3
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
11 in stock
#C22365189
Stock & price checked 7 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹414.84 | ₹414.84 |
| 10+ | ₹354.66 | ₹3,546.60 |
| 30+ | ₹318.90 | ₹9,567.00 |
| 90+ | ₹282.61 | ₹25,434.90 |
| 510+ | ₹266.08 | ₹1,35,700.80 |
| 1,200+ | ₹258.53 | ₹3,10,236.00 |
1 × ₹414.84
₹414.84
excl. GST
₹489.51 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 30 per tube
C2M0080120D
₹414.84 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 1.2kV
- Output Capacitance(Coss)
- 92pF
- Current - Continuous Drain(Id)
- 36A
- Ciss-Input Capacitance
- 1.13nF
- Pd - Power Dissipation
- 192W
- Reverse Transfer Capacitance (Crss)
- 7.5pF
- RDS(on)
- 98mΩ
- Number
- 1 N-channel
- Gate Charge(Qg)
- 71nC
- Type
- N-Channel
- Gate Threshold Voltage (Vgs(th))
- 4V
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 1 (unlimited)
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 8.016 g
Same category
