MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹1.93
26,12,850 in stock
Wuxi China Resources Huajing MicroelectronicsDatasheet (PDF)
CS4N60A3R
N-Channel 600V 4A 75W Through Hole TO-251
TO-251RoHSActive
MOSFET N-CH 600V 4A TO-251
- Manufacturer
- Wuxi China Resources Huajing Microelectronics
- Manufacturer part #
- CS4N60A3R
- Store part #
- C140732
- Package / case
- TO-251
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
2 in stock
#C140732
Stock & price checked 7 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹27.37 | ₹27.37 |
| 10+ | ₹21.68 | ₹216.80 |
| 30+ | ₹19.24 | ₹577.20 |
| 75+ | ₹16.20 | ₹1,215.00 |
| 525+ | ₹14.85 | ₹7,796.25 |
| 975+ | ₹14.04 | ₹13,689.00 |
1 × ₹27.37
₹27.37
excl. GST
₹32.30 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 75 per tube
CS4N60A3R
₹27.37 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 55pF
- Ciss-Input Capacitance
- 590pF
- Pd - Power Dissipation
- 75W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 600V
- Current - Continuous Drain(Id)
- 4A
- Reverse Transfer Capacitance (Crss)
- 4pF
- RDS(on)
- 2.5Ω@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 14.5nC@10V
- Vgs
- ±30V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 1 (unlimited)
- Packaging
- Tube-packed
- Standard pack
- 75 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.5 g
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