DRV8300DPWR

The DRV8300 is a 100V three-phase half-bridge gate driver capable of driving high-side and low-side N-channel power MOSFETs. The DRV8300D uses an integrated bootstrap diode and an external capacitor to generate an appropriate gate drive voltage for the high-side MOSFETs. The DRV8300N uses an external bootstrap diode and an external capacitor to generate an appropriate gate drive voltage for the high-side MOSFETs. GVDD is used to generate the gate drive voltage for the low-side MOSFETs. The gate drive architecture supports a peak sourcing current of up to 750mA and a sinking current of 1.5A. The phase pins SHx can withstand significant negative voltage transients; while the high-side gate driver power supplies BSTx and GHx can support higher positive voltage transients (125V) absolute maximum values, thereby improving the system's robustness. Small propagation delay and delay matching parameters minimize the dead time. The DRV8300 series of devices are gate drivers for three-phase motor drive applications. These devices reduce the number of system components, saving PCB space and cost by integrating three independent half-bridge gate drivers and optional bootstrap diodes. The DRV8300 supports external N-channel high-side and low-side power MOSFETs, and can drive a peak current of 750mA sourcing and 1.5A sinking, with a total combined average output current of 30mA. The DRV8300 series of devices are available in 0.5mm pitch QFN and 0.65mm pitch TSSOP surface-mount packages. The 24-pin QFN package measures 4×4mm (0.5mm pin pitch), and the 20-pin TSSOP package body measures 6.5×4.4mm (0.65mm pin pitch).

Applications

• E-bikes, e-scooters, and electric vehicles
• Fans, pumps, and servo drives
• BLDC motor modules and PMSM
• Cordless gardening and power tools, lawn mowers
• Cordless vacuum cleaners
• Drones, robots, and RC toys
• Industrial and logistics robots

Key features

• 100V three-phase half-bridge gate driver
• Drives N-channel MOSFETs (NMOS)
• Gate driver supply (GVDD): 5 - 20V
• MOSFET supply (SHx) supports up to 100V
• Integrated bootstrap diode (DRV8300D device)
• Supports inverting and non-inverting INLx inputs
• Bootstrap gate drive architecture
• 750mA source current
• 1.5A sink current
• Supports applications powered by up to 15 series-connected batteries
• SHx pin low leakage current (less than 55µA)
• Absolute maximum BSTx voltage up to 125V
• SHx pin transient negative voltage down to -22V
• Built-in cross-conduction protection
• QFN package: adjustable dead time via DT pin
• TSSOP package: fixed 200ns dead time insertion
• Supports 3.3V and 5V logic inputs (absolute maximum 20V)
• 4ns typical propagation delay matching
• Compact QFN and TSSOP packages
• High-efficiency system design with power block
• Integrated protection features
• BST undervoltage lockout (BSTUV)
• GVDD undervoltage (GVDDUV)