Varnitronics
EG12522 EG Micro
EG Micro

EG12522

Half-Bridge Gate Driver IC MOSFET SOP-8

SOP-8ROHS CompliantActive

Special half-bridge driver IC for double-transistor forward converter

Manufacturer
EG Micro
Manufacturer part #
EG12522
Store part #
C48580024
Package / case
SOP-8
Category
Gate Drivers
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

3,715 in stock

#C48580024

Stock & price checked 6 days ago

QuantityUnit pricePack price
5+₹19.04₹95.20
50+₹16.63₹831.50
150+₹15.60₹2,340.00
500+₹14.30₹7,150.00
2,500+₹13.73₹34,325.00
4,000+₹13.39₹53,560.00

5 × ₹19.04

₹95.20

excl. GST

₹112.34 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 7–10 working days
  • GST invoice with every order
  • Standard pack: 4,000 per reel

EG12522

₹95.20 for 5 + GST

Specifications

Input Logic Level - Low
-300mV~1V
Low Level Delay Time
100ns
High Level Delay Time
70ns
Quiescent Current
0uA
Voltage - Supply
4V~20V
Operating Temperature
-45℃~+125℃
Driven Configuration
Half-Bridge
Current - Output Low(IOL)
1.2A
Rise Time
30ns
Fall Time
20ns
Features
Dead-time control
Current - Output High(IOH)
800mA
Load Type
MOSFET

Packaging & compliance

RoHS
ROHS Compliant
Lifecycle
Active
Packaging
Tape & Reel (TR)
Standard pack
4,000 / Reel
Sold per
Piece
Minimum order
5 (multiples of 5)
Unit weight
0.19 g

Overview

EG12522 is a cost-effective half-bridge driver IC dedicated to dual-switch forward converter applications. It integrates logic signal input processing, level shifting, pulse filtering, and output gate drive circuits, specifically designed for dual-switch forward power supply topologies. The high-side operating voltage reaches up to 600V, with a wide low-side Vcc supply voltage range of 4V to 20V. The input channel IN incorporates a built-in 100kΩ pull-down resistor, ensuring both the high-side and low-side power MOSFETs remain off when the input is floating. The output current capability IO+/- is 0.8A/1.2A, housed in an SOP8 package. When the input logic signal IN is "0", the driver controls HO to "0" (high-side switch off) and LO to "0" (low-side switch off); when IN is "1", the driver controls HO to "1" (high-side switch on) and LO to "1" (low-side switch on). The IC employs a bootstrap floating drive supply architecture, greatly simplifying the gate drive power supply design — a single supply voltage VCC is sufficient to drive both the high-side N-channel MOSFET and the low-side N-channel MOSFET. The minimum bootstrap capacitance VC can be calculated using the following formula: VC ≥ 15 × (2 × [2 × Qg + Qperiod + (Ibso/F) + (Ibsc/F)]) / (Vcc - VF - Vds). Where: Qg is the gate charge of the high-side MOSFET; Qperiod is the charge requirement of the level-shift circuit per cycle, approximately 5nC; Ibso is the quiescent current of the high-side driver when turned on; Ibsc is the leakage current of the bootstrap capacitor; F is the operating frequency; Vcc is the low-side supply voltage; VF is the forward voltage drop of the bootstrap diode; Vds is the GS voltage required to fully turn on the MOSFET.

Applications

  • Dual-transistor forward converter power supply

Key features

  • Dual-switch forward converter 600V high-voltage gate drive
  • High-side floating bootstrap supply design
  • IN compatible with 0–20V input voltage
  • Quiescent current below 1μA
  • Maximum switching frequency up to 500kHz
  • Low-side VCC voltage range 4V–20V
  • Output current capability IO+/- 0.8A/1.2A
  • HO/LO channel matched output
  • Minimal external components
  • Package: SOP8

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