HXY MOSFETDatasheet (PDF)
FGH40T65SQD-F155-HXY
IGBT 650V 70A 250W Through Hole TO-247
TO-247ROHS CompliantSold out at source
IGBT 650V 70A TO-247
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- FGH40T65SQD-F155-HXY
- Store part #
- C49003409
- Package / case
- TO-247
- Category
- Single IGBTs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
23 in stock
#C49003409
Stock & price checked 7 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹457.68 | ₹457.68 |
| 10+ | ₹409.78 | ₹4,097.80 |
| 30+ | ₹381.37 | ₹11,441.10 |
| 90+ | ₹352.59 | ₹31,733.10 |
| 510+ | ₹339.37 | ₹1,73,078.70 |
| 990+ | ₹333.30 | ₹3,29,967.00 |
1 × ₹457.68
₹457.68
excl. GST
₹540.06 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 30 per tube
FGH40T65SQD-F155-HXY
₹457.68 for 1 + GST
Specifications
- Pd - Power Dissipation
- 250W
- Td(off)
- 136ns
- Td(on)
- 26ns
- Current - Collector(Ic)
- 70A
- Collector-Emitter Breakdown Voltage (Vces)
- 650V
- Reverse Transfer Capacitance (Cres)
- 11pF
- Gate-Emitter Threshold Voltage (Vge(th)@Ic)
- 3.2V@250uA
- Operating Temperature
- -40℃~+175℃
- Vce Saturation(VCE(sat))
- 2.1V@40A,15V
- Reverse Recovery Time(trr)
- 56ns
- Switching Energy(Eoff)
- 430uJ
- Turn-On Energy (Eon)
- 900uJ
- Input Capacitance(Cies)
- 1.52nF@25V
- Output Capacitance(Coes)
- 110pF
- Gate Charge(Qg)
- 57nC@15V
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Sold out at source
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 7.87 g
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