HXY MOSFETDatasheet (PDF)
NGTG35N65FL2WG-HXY
IGBT 650V 70A Through Hole TO-247
TO-247ROHS CompliantActive
IGBT 650V 70A TO-247
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- NGTG35N65FL2WG-HXY
- Store part #
- C49003447
- Package / case
- TO-247
- Category
- Single IGBTs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
16 in stock
#C49003447
Stock & price checked 7 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹328.03 | ₹328.03 |
| 10+ | ₹282.14 | ₹2,821.40 |
| 30+ | ₹253.57 | ₹7,607.10 |
| 90+ | ₹224.29 | ₹20,186.10 |
| 510+ | ₹210.89 | ₹1,07,553.90 |
| 990+ | ₹205.18 | ₹2,03,128.20 |
1 × ₹328.03
₹328.03
excl. GST
₹387.08 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 30 per tube
NGTG35N65FL2WG-HXY
₹328.03 for 1 + GST
Specifications
- Pd - Power Dissipation
- 250W
- Td(off)
- 136ns
- Td(on)
- 26ns
- Current - Collector(Ic)
- 70A
- Collector-Emitter Breakdown Voltage (Vces)
- 650V
- Reverse Transfer Capacitance (Cres)
- 11pF
- Gate-Emitter Threshold Voltage (Vge(th)@Ic)
- 3.2V@250uA
- Operating Temperature
- -40℃~+175℃
- Vce Saturation(VCE(sat))
- 2.1V@40A,15V
- Collector Cut-Off Current (Ices)
- 40uA
- Reverse Recovery Time(trr)
- 56ns
- Switching Energy(Eoff)
- 430uJ
- Turn-On Energy (Eon)
- 900uJ
- Input Capacitance(Cies)
- 1.52nF@25V
- Output Capacitance(Coes)
- 110pF
- Gate Charge(Qg)
- 57nC@15V
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 7.91 g
Same category
More in Single IGBTs
onsemi
HGTD1N120BNS9AIGBT NPT (Non-Punch Through) 1.2kV 5.3A 60W Surface Mount TO-252AA
From
₹125.69
18,103 in stock
Hangzhou Silan Microelectronics
SGT50T65FD1PN235W 100A 650V FS (Field Stop) TO-3P-3 Single IGBTs
From
₹146.39
14,966 in stock
