Varnitronics
GBI7250TJBR GOSEMICON
GOSEMICON

GBI7250TJBR

Low Side Gate Driver IC MOSFET IGBT TSOT23-5

TSOT23-5RoHSActive

Single Channel High Speed Low Side Driver with Negative Input Capability

Manufacturer
GOSEMICON
Manufacturer part #
GBI7250TJBR
Store part #
C5451739
Package / case
TSOT23-5
Category
Gate Drivers
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

1,370 in stock

#C5451739

Stock & price checked 5 days ago

QuantityUnit pricePack price
5+₹30.12₹150.60
50+₹24.00₹1,200.00
150+₹21.38₹3,207.00
500+₹18.11₹9,055.00
3,000+₹16.65₹49,950.00
6,000+₹15.78₹94,680.00

5 × ₹30.12

₹150.60

excl. GST

₹177.71 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 7–10 working days
  • GST invoice with every order
  • Standard pack: 3,000 per reel

GBI7250TJBR

₹150.60 for 5 + GST

Specifications

Input Logic Level - Low
950mV~1.1V
Low Level Delay Time
13ns
High Level Delay Time
13ns
Quiescent Current
30uA
Input Logic Level - High
2.3V~2.6V
Voltage - Supply
4.5V~20V
Driven Configuration
Low Side
Operating Temperature
-40℃~+150℃
Current - Output Low(IOL)
5A
Rise Time
9ns
Fall Time
6ns
Features
Interleaved conduction protection
Current - Output High(IOH)
5A
Load Type
MOSFET;IGBT

Packaging & compliance

RoHS
RoHS
Lifecycle
Active
Packaging
Tape & Reel (TR)
Standard pack
3,000 / Reel
Sold per
Piece
Minimum order
5 (multiples of 5)
Unit weight
0.03 g

Overview

The GBI7250 is a single-channel, high-speed, low-side gate driver capable of delivering 5A peak source and sink current with rail-to-rail drive capability for MOSFET, IGBT, and GaN power devices. The device features a minimum 13ns input-to-output propagation delay, and a 20V supply rail makes it suitable for high-frequency power converter applications. The input can go as low as -5V to enhance input noise immunity. Wide input hysteresis ensures compatibility with TTL low-voltage logic. The flexible configuration of IN+ and IN- inputs allows the GBI7250 SOT23-THN to function as either a non-inverting or inverting driver. It operates over a wide temperature range of -40°C to 150°C. The GBI7250 is available in SOT23-THN and SOIC-8L packages. The device is a single-channel, high-speed, low-side gate driver for power MOSFETs, IGBTs, and GaN HMETs, featuring a wide supply voltage up to 20V, 5A source/sink peak current, and a minimum 13ns input-to-output propagation delay. The input can go as low as -5V DC, enhancing the noise immunity of the driver input stage. The 20V rail-to-rail output improves the robustness of the GBI7250 output stage during fast switching transitions of the load. The GBI7250 input is TTL logic compatible and independent of the VDD supply voltage. Typical threshold voltages of 2.3V (high) and 1.0V (low) allow the device to be easily driven by PWM control signals sourced from 3.3V and 5V digital power controller devices. Compared to a typical hysteresis of 0.5V, the wider hysteresis of this device provides greater noise immunity. It also achieves tight control of the input threshold voltage, ensuring stable operation across the full temperature range. Low input capacitance on the input pins improves switching speed and reduces propagation delay.

Applications

  • Power MOSFET gate drive
  • IGBT gate drive
  • GaN device gate drive
  • Switching power supply
  • Motor control
  • Solar power generation

Key features

  • 5A peak source current and 5A peak sink current
  • Wide supply voltage range: 4.5V to 20V
  • Negative input voltage capability: as low as -5V
  • Fast propagation delay: 13ns
  • Fast rise and fall times: 9ns and 6ns
  • TTL input logic threshold
  • Undervoltage lockout protection
  • Low quiescent current: 30μA
  • Output low when input is floating
  • Available in SOT23-THN and SOIC-8L packages

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