HT25WD40ARZ

The HT25WD40A of non-volatile flash memory device supports the standard Serial Peripheral Interface (SPI). Traditional SPI single bit serial input and output (Single I/O or SIO) is supported as well as optional two bit (Dual I/O or DIO) serial protocols. This multiple width interface is called SPI Multi-I/O or MIO. The SPI protocols use only 4 signals: Chip Select (CS#) Serial Clock (CLK) Serial Data - IO0 (DI) - O1 (DO) The HT25WD40A support the standard Serial Peripheral Interface (SPI) and Dual Output SPI: Serial Clock, Chip Select, Serial Data I/O0 (DI), O1 (DO). SPI clock frequencies of up to 100MHz are supported allowing equivalent clock rates of 200MHz (100MHz x 2) for Dual Output when using the Fast Read Dual Output. These transfer rates can outperform standard Asynchronous 8 and 16-bit Parallel Flash memories.

Key features

• Low power supply operation Single 1.65V-3.6V supply
• 4M bit Serial Flash - 4 M-bit/512K-byte/2,048 pages - 256 bytes per programmable page - Uniform 4K-byte Sectors, 32K/64K-byte Blocks
• New Family of SpiFlash Memories - Standard SPI: CLK, CS#, DI, DO, WP# Dual SPI: CLK, CS#, DI, DO, WP# - Auto-increment Read capability
• Temperature Ranges - Industrial -40℃ to 85℃ - Industrial ( -40℃ to 105℃ ) - Industrial (-40℃ to 125℃ )
• Low power consumption - 0.5/1 uA typical standby current 0.5/1 uA typical power down current
• Flexible Architecture with 4KB sectors Sector Erase (4K-bytes) Block Erase (32K/64K-bytes) Page Program up to 256 bytes More than 100K erase/program cycles - More than 20-year data retention
• Advanced Security Feature - Software and Hardware Write-Protect - 128-Bit Unique ID for each device
• High performance program/erase speed - Page program time: 1.2ms typical - Sector erase time: 75ms typical - Block erase time: 0.35s typical - Chip erase time: 2.3s typical
• Package Options - SOP8 - 150mil/208mil - TFBGA24 - TSSOP8 - 173mil - DFN8 (2*3*0.55mm) - DFN8 (1.5*1.5*0.45mm) - All Pb-free packages are RoHS compliant