MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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25,99,250 in stock
HTCSEMIDatasheet (PDF)
HT36N1200ADZ
1.2kV 36A 192W Through Hole TO-247-3
TO-247-3ROHS CompliantActive
Silicon Carbide Power MOSFET N-Channel Enhancement Mode
- Manufacturer
- HTCSEMI
- Manufacturer part #
- HT36N1200ADZ
- Store part #
- C47326416
- Package / case
- TO-247-3
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
14 in stock
#C47326416
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹415.09 | ₹415.09 |
| 10+ | ₹356.14 | ₹3,561.40 |
| 30+ | ₹321.16 | ₹9,634.80 |
| 90+ | ₹285.78 | ₹25,720.20 |
| 510+ | ₹269.40 | ₹1,37,394.00 |
| 990+ | ₹262.01 | ₹2,59,389.90 |
1 × ₹415.09
₹415.09
excl. GST
₹489.81 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 30 per tube
HT36N1200ADZ
₹415.09 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 1.2kV
- Output Capacitance(Coss)
- 92pF
- Current - Continuous Drain(Id)
- 36A
- Ciss-Input Capacitance
- 1.13nF
- Pd - Power Dissipation
- 192W
- Reverse Transfer Capacitance (Crss)
- 7.5pF
- RDS(on)
- 98mΩ
- Number
- 1 N-channel
- Gate Charge(Qg)
- 71nC
- Type
- N-Channel
- Gate Threshold Voltage (Vgs(th))
- 4V
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 8.39 g
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