MDD(Microdiode Semiconductor)
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HTCSEMIDatasheet (PDF)
HT36N1200AKZ
1.2kV 36A 192W Through Hole TO-247-4L
TO-247-4LROHS CompliantActive
Silicon Carbide Power MOSFET, N-Channel Enhancement Mode
- Manufacturer
- HTCSEMI
- Manufacturer part #
- HT36N1200AKZ
- Store part #
- C47326415
- Package / case
- TO-247-4L
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
13 in stock
#C47326415
Stock & price checked 2 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹445.73 | ₹445.73 |
| 10+ | ₹382.43 | ₹3,824.30 |
| 30+ | ₹344.87 | ₹10,346.10 |
| 90+ | ₹306.88 | ₹27,619.20 |
| 510+ | ₹289.29 | ₹1,47,537.90 |
| 990+ | ₹281.35 | ₹2,78,536.50 |
1 × ₹445.73
₹445.73
excl. GST
₹525.96 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 30 per tube
HT36N1200AKZ
₹445.73 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 1.2kV
- Output Capacitance(Coss)
- 92pF
- Current - Continuous Drain(Id)
- 36A
- Ciss-Input Capacitance
- 1.13nF
- Pd - Power Dissipation
- 192W
- Reverse Transfer Capacitance (Crss)
- 7.5pF
- RDS(on)
- 98mΩ
- Number
- 1 N-channel
- Gate Charge(Qg)
- 71nC
- Type
- N-Channel
- Gate Threshold Voltage (Vgs(th))
- 4V
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 8.537 g
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