MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
HTCSEMIDatasheet (PDF)
HT52N650AKZ
650V 52A 176W Through Hole TO-247-4L
TO-247-4LROHS CompliantActive
Silicon Carbide Power MOSFET N-Channel Enhancement Mode
- Manufacturer
- HTCSEMI
- Manufacturer part #
- HT52N650AKZ
- Store part #
- C47325508
- Package / case
- TO-247-4L
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
12 in stock
#C47325508
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹591.10 | ₹591.10 |
| 10+ | ₹507.12 | ₹5,071.20 |
| 30+ | ₹457.26 | ₹13,717.80 |
| 90+ | ₹406.95 | ₹36,625.50 |
| 510+ | ₹383.63 | ₹1,95,651.30 |
| 990+ | ₹373.06 | ₹3,69,329.40 |
1 × ₹591.10
₹591.10
excl. GST
₹697.50 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 30 per tube
HT52N650AKZ
₹591.10 for 1 + GST
Specifications
- Operating Temperature
- -40℃~+175℃
- Drain to Source Voltage
- 650V
- Current - Continuous Drain(Id)
- 52A
- Output Capacitance(Coss)
- 101pF
- Ciss-Input Capacitance
- 1.621nF
- Pd - Power Dissipation
- 176W
- Reverse Transfer Capacitance (Crss)
- 8pF
- RDS(on)
- 60mΩ
- Number
- 1 N-channel
- Gate Charge(Qg)
- 63nC
- Type
- N-Channel
- Gate Threshold Voltage (Vgs(th))
- 3.6V
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 8.543 g
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