MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
HANGYU MICROELECTRONICSDatasheet (PDF)
HY4N60
600V 4A 1.9Ω@10V 1 N-channel N-Channel TO-220F Single FETs, MOSFETs
TO-220FRoHSActive
- Manufacturer
- HANGYU MICROELECTRONICS
- Manufacturer part #
- HY4N60
- Store part #
- C55080537
- Package / case
- TO-220F
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
50 in stock
#C55080537
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 5+ | ₹31.50 | ₹157.50 |
| 50+ | ₹25.88 | ₹1,294.00 |
| 150+ | ₹23.46 | ₹3,519.00 |
| 500+ | ₹20.45 | ₹10,225.00 |
| 2,000+ | ₹19.12 | ₹38,240.00 |
| 5,000+ | ₹18.31 | ₹91,550.00 |
5 × ₹31.50
₹157.50
excl. GST
₹185.85 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
HY4N60
₹157.50 for 5 + GST
Specifications
- Drain to Source Voltage
- 600V
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 4A
- Output Capacitance(Coss)
- 80pF
- Ciss-Input Capacitance
- 550pF
- Reverse Transfer Capacitance (Crss)
- 30pF
- RDS(on)
- 1.9Ω@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 80nC
- Vgs
- ±30V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 1 (unlimited)
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 5 (multiples of 5)
- Unit weight
- 2.62 g
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