MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
26,12,850 in stock
HUAYIDatasheet (PDF)
HYG200N12NS1P
N-Channel 120V 60A 125W Through Hole TO-220FB-3
TO-220FB-3ROHS CompliantActive
MOSFET N-CH 120V 60A TO-220FB-3
- Manufacturer
- HUAYI
- Manufacturer part #
- HYG200N12NS1P
- Store part #
- C2981473
- Package / case
- TO-220FB-3
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
1 in stock
#C2981473
Stock & price checked 9 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹80.31 | ₹80.31 |
| 10+ | ₹65.66 | ₹656.60 |
| 50+ | ₹58.13 | ₹2,906.50 |
| 100+ | ₹50.82 | ₹5,082.00 |
| 500+ | ₹46.50 | ₹23,250.00 |
| 1,000+ | ₹44.14 | ₹44,140.00 |
1 × ₹80.31
₹80.31
excl. GST
₹94.77 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 50 per tube
HYG200N12NS1P
₹80.31 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 327pF
- Ciss-Input Capacitance
- 2.35nF
- Pd - Power Dissipation
- 125W
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 120V
- Current - Continuous Drain(Id)
- 60A
- Reverse Transfer Capacitance (Crss)
- 18pF
- RDS(on)
- 20mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 33.1nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.76 g
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