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InfineonDatasheet (PDF)
IMZA65R072M1HXKSA1
650V 28A 96W 94mΩ 1 N-channel N-Channel TO-247-4 Single FETs, MOSFETs RoHS
TO-247-4ROHS3 CompliantActive
650V CoolSiC M1 SiC Trench Power Device
- Manufacturer
- Infineon
- Manufacturer part #
- IMZA65R072M1HXKSA1
- Store part #
- C3029556
- Package / case
- TO-247-4
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
49 in stock
#C3029556
Stock & price checked 4 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹813.90 | ₹813.90 |
| 10+ | ₹705.08 | ₹7,050.80 |
| 30+ | ₹638.61 | ₹19,158.30 |
| 90+ | ₹583.01 | ₹52,470.90 |
1 × ₹813.90
₹813.90
excl. GST
₹960.40 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 30 per tube
IMZA65R072M1HXKSA1
₹813.90 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 650V
- Output Capacitance(Coss)
- 112pF
- Current - Continuous Drain(Id)
- 28A
- Ciss-Input Capacitance
- 744pF
- Pd - Power Dissipation
- 96W
- Reverse Transfer Capacitance (Crss)
- 9pF
- RDS(on)
- 94mΩ
- Number
- 1 N-channel
- Gate Charge(Qg)
- 22nC
- Gate Threshold Voltage (Vgs(th))
- 5.7V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 7.55 g
Overview
The 650 V CoolSiC™ is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgap SiC material characteristics, the 650V CoolSiC™ MOSFET offers a unique combination of performance, reliability and ease of use. Suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency.
Applications
- SMPS
- UPS (uninterruptable power supplies)
- Solar PV inverters
- EV charging infrastructure
- Energy storage and battery formation
- Class D amplifiers
Key features
- Optimized switching behavior at higher currents
- Commutation robust fast body diode with low Qrr
- Superior gate oxide reliability
- Best thermal conductivity and behavior
- Lower RDS(on) and pulse current dependency on temperature
- Increased avalanche capability
- Compatible with standard drivers (recommended driving voltage: 18V)
- Kelvin source provides up to 4 times lower switching losses
Alternatives
Similar parts — check the datasheet before substituting.
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