MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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26,12,850 in stock
HTCSEMIDatasheet (PDF)
HT39N650AKZ
650V 39A 150W Through Hole TO-247-4L
TO-247-4LROHS CompliantActive
Silicon Carbide Power MOSFET N-Channel Enhancement Mode
- Manufacturer
- HTCSEMI
- Manufacturer part #
- HT39N650AKZ
- Store part #
- C47325509
- Package / case
- TO-247-4L
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
9 in stock
#C47325509
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹440.20 | ₹440.20 |
| 10+ | ₹377.81 | ₹3,778.10 |
| 30+ | ₹340.67 | ₹10,220.10 |
| 90+ | ₹303.11 | ₹27,279.90 |
| 510+ | ₹285.83 | ₹1,45,773.30 |
| 990+ | ₹277.86 | ₹2,75,081.40 |
1 × ₹440.20
₹440.20
excl. GST
₹519.44 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 30 per tube
HT39N650AKZ
₹440.20 for 1 + GST
Specifications
- Operating Temperature
- -40℃~+175℃
- Drain to Source Voltage
- 650V
- Current - Continuous Drain(Id)
- 39A
- Output Capacitance(Coss)
- 80pF
- Ciss-Input Capacitance
- 1.02nF
- Pd - Power Dissipation
- 150W
- Reverse Transfer Capacitance (Crss)
- 9pF
- RDS(on)
- 79mΩ
- Number
- 1 N-channel
- Gate Charge(Qg)
- 46nC
- Type
- N-Channel
- Gate Threshold Voltage (Vgs(th))
- 2.3V
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 8.533 g
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