IR21531STRPBF
10V~15.6V SOIC-8 Gate Drivers RoHS
SELF-OSCILLATING HALF-BRIDGE DRIVER
- Manufacturer
- Infineon
- Manufacturer part #
- IR21531STRPBF
- Store part #
- C2985
- Package / case
- SOIC-8
- Category
- Gate Drivers
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
8,826 in stock
#C2985
Stock & price checked 6 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹137.78 | ₹137.78 |
| 10+ | ₹113.00 | ₹1,130.00 |
| 30+ | ₹99.32 | ₹2,979.60 |
| 100+ | ₹83.88 | ₹8,388.00 |
| 500+ | ₹77.14 | ₹38,570.00 |
| 1,000+ | ₹73.89 | ₹73,890.00 |
1 × ₹137.78
₹137.78
excl. GST
₹162.58 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 2,500 per reel
IR21531STRPBF
₹137.78 for 1 + GST
Specifications
- Quiescent Current
- 500uA
- Voltage - Supply
- 10V~15.6V
- Operating Temperature
- -40℃~+125℃
- Driven Configuration
- Half-Bridge
- Rise Time
- 80ns
- Fall Time
- 45ns
- Features
- Undervoltage Protection
- Load Type
- MOSFET
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,500 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 1.5 g
Overview
The IR21531D(S) are an improved version of the popular IR2155 and IR2151 gate driver ICs, and incorporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer. The IR21531 provides more functionality and is easier to use than previous ICs. A shutdown feature has been designed into the CT pin, so that both gate driver outputs can be disabled using a low voltage control signal. In addition, the gate driver output pulse widths are the same once the rising undervoltage lockout threshold on VCC has been reached, resulting in a more stable profile of frequency vs time at startup. Noise immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers, and by increasing the undervoltage lockout hysteresis to 1V. Finally, special attention has been payed to maximizing the latch immunity of the device, and providing comprehensive ESD protection on all pins.
Key features
- Integrated 600V half-bridge gate driver
- 15.6V zener clamp on Vcc
- True micropower start up
- Tighter initial deadtime control
- Low temperature coefficient deadtime
- Shutdown feature (1/6th Vcc) on CT pin
- Increased undervoltage lockout Hysteresis (1V)
- Lower power level-shifting circuit
- Constant LO, HO pulse widths at startup
- Lower di/dt gate driver for better noise immunity
- Low side output in phase with RT
- Internal 50nsec (typ.) bootstrap diode (IR21531D)
- Excellent latch immunity on all inputs and outputs
- ESD protection on all leads
- Also available LEAD-FREE
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