MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
HXY MOSFETDatasheet (PDF)
IRF640NPBF-HXY
N-Channel 200V 18A 125W Through Hole TO-220
TO-220RoHSActive
MOSFET N-CH 200V 18A TO-220
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- IRF640NPBF-HXY
- Store part #
- C19267789
- Package / case
- TO-220
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
77 in stock
#C19267789
Stock & price checked 28 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹66.35 | ₹66.35 |
| 10+ | ₹53.13 | ₹531.30 |
| 50+ | ₹45.10 | ₹2,255.00 |
| 100+ | ₹37.94 | ₹3,794.00 |
| 500+ | ₹34.70 | ₹17,350.00 |
| 1,000+ | ₹32.96 | ₹32,960.00 |
1 × ₹66.35
₹66.35
excl. GST
₹78.29 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 50 per tube
IRF640NPBF-HXY
₹66.35 for 1 + GST
Specifications
- Configuration
- Standalone
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 200V
- Output Capacitance(Coss)
- 180pF
- Current - Continuous Drain(Id)
- 18A
- Ciss-Input Capacitance
- 1.1nF
- Pd - Power Dissipation
- 125W
- Reverse Transfer Capacitance (Crss)
- 30pF
- RDS(on)
- 120mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 25nC@10V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 1 (unlimited)
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.845 g
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