MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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HXY MOSFETDatasheet (PDF)
PSMN057-200P-HXY
125W 200V 18A 120mΩ@10V 1 N-channel N-Channel TO-220C Single FETs, MOSFETs
TO-220CRoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- PSMN057-200P-HXY
- Store part #
- C54582851
- Package / case
- TO-220C
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
25 in stock
#C54582851
Stock & price checked 9 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹342.99 | ₹342.99 |
| 10+ | ₹295.10 | ₹2,951.00 |
| 50+ | ₹265.25 | ₹13,262.50 |
| 100+ | ₹234.53 | ₹23,453.00 |
| 500+ | ₹220.57 | ₹1,10,285.00 |
| 1,000+ | ₹214.56 | ₹2,14,560.00 |
1 × ₹342.99
₹342.99
excl. GST
₹404.73 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 50 per tube
PSMN057-200P-HXY
₹342.99 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 180pF
- Ciss-Input Capacitance
- 1.1nF
- Pd - Power Dissipation
- 125W
- Operating Temperature
- -55℃~+150℃
- Configuration
- Standalone
- Drain to Source Voltage
- 200V
- Current - Continuous Drain(Id)
- 18A
- Reverse Transfer Capacitance (Crss)
- 30pF
- RDS(on)
- 120mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 25nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 3.204 g
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