MDD(Microdiode Semiconductor)
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HXY MOSFETDatasheet (PDF)
IRFB4410PBF-HXY
100W 100V 70A 8.5mΩ@10V 1 N-channel N-Channel TO-220C Single FETs, MOSFETs
TO-220CRoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- IRFB4410PBF-HXY
- Store part #
- C53262895
- Package / case
- TO-220C
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
39 in stock
#C53262895
Stock & price checked 41 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹148.41 | ₹148.41 |
| 10+ | ₹121.78 | ₹1,217.80 |
| 50+ | ₹108.46 | ₹5,423.00 |
| 100+ | ₹95.36 | ₹9,536.00 |
| 500+ | ₹87.41 | ₹43,705.00 |
| 1,000+ | ₹83.34 | ₹83,340.00 |
1 × ₹148.41
₹148.41
excl. GST
₹175.12 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 50 per tube
IRFB4410PBF-HXY
₹148.41 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 451pF
- Ciss-Input Capacitance
- 1.368nF
- Pd - Power Dissipation
- 100W
- Configuration
- Standalone
- Drain to Source Voltage
- 100V
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 70A
- Reverse Transfer Capacitance (Crss)
- 12.9pF
- RDS(on)
- 8.5mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 31.3nC@50V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 2.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 3.048 g
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