K4B4G1646E-BYMA

4Gbit 933MHz DDR3L SDRAM FBGA-96 Memory RoHS

FBGA-96ROHS CompliantActive

DDR3L SDRAM

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

1,988 in stock

#C2940213

Stock & price checked 5 days ago

Quantity (min 1)

1 × ₹2,201.67

₹2,201.67

excl. GST

₹2,597.97 incl. 18% GST

K4B4G1646E-BYMA

₹2,201.67 for 1 + GST

Specifications

Operating Temperature: 0℃~+95℃
Features: Auto precharge function;Asynchronous reset function;Dynamic on-chip termination;ZQ calibration function;Data mask function
Refresh Current: 2mA;3mA
Memory Size: 4Gbit
Voltage - Supply: 1.28V~1.575V;14mA
Clock Frequency: 933MHz
Memory Format: DDR3L SDRAM

JEDEC standard 1.35V(1.28V~1.45V) & 1.5V(1.425V~1.575V)
V_DDO = 1.35V(1.28V~1.45V) & 1.5V(1.425V~1.575V)
400 MHz f_CK for 800Mb/sec/pin, 533MHz f_CK for 1066Mb/sec/pin, 667MHz f_CK for 1333Mb/sec/pin, 800MHz f_CK for 1600Mb/sec/pin, 933MHz f_CK for 1866Mb/sec/pin
8 Banks
Programmable CAS Latency(posted CAS): 5,6,7,8,9,10,11,12,13
Programmable Additive Latency: 0, CL - 2 or CL - 1 clock
Programmable CAS Write Latency (CWL) = 5 (DDR3 - 800), 6 (DDR3 - 1066), 7 (DDR3 - 1333), 8 (DDR3 - 1600) and 9(DDR3 - 1866)
8 - bit pre - fetch
Burst Length: 8, 4 with ICCD = 4 which does not allow seamless read or write [either On the fly using A12 or MRS]
Bi - directional Differential Data - Strobe
Internal(self) calibration: Internal self calibration through ZQ pin (RZQ:240 ohm ±1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than T_CASE 85°C, 3.9us at 85°C <

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