ST
M24C01-WMN6P
1Kbit 400kHz I2C SO-8 Memory RoHS
SO-8ROHS3 CompliantActive
1-Kbit and 2-Kbit serial I²C bus EEPROMs
Datasheet (PDF)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
3,985 in stock
#C283640
Stock & price checked 6 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 5+ | ₹32.51 | ₹162.55 |
| 50+ | ₹25.49 | ₹1,274.50 |
| 200+ | ₹22.49 | ₹4,498.00 |
| 500+ | ₹18.75 | ₹9,375.00 |
| 2,000+ | ₹17.08 | ₹34,160.00 |
| 5,000+ | ₹16.07 | ₹80,350.00 |
5 × ₹32.51
₹162.55
excl. GST
₹191.81 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 100 per tube
M24C01-WMN6P
₹162.55 for 5 + GST
Specifications
- Operating Temperature
- -40℃~+85℃
- Features
- Hardware write protection function;Built-in power-on reset (POR)
- Memory Size
- 1Kbit
- Voltage - Supply
- 2.5V~5.5V;1mA
- Clock Frequency
- 400kHz
- Access Time
- 900ns
- Data Retention - TDR (Year)
- 200 Years
- Write Cycle Time(tWC)
- 5ms
- Standby Supply Current
- 3uA
- Write Cycle Endurance
- 4,000,000 Cycles
- Interface
- I2C
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 100 / Tube
- Sold per
- Piece
- Minimum order
- 5 (multiples of 5)
- Unit weight
- 0.07 g
Overview
The M24C01(C02) is a 1(2)-Kbit |²C-compatible EEPROM (Electrically Erasable PROgrammable Memory) organized as 128 (256)x8 bits. The M24C01/02-W can be accessed with a supply voltage from 2.5 V to 5.5 V; the M24C01/02-R can be accessed with a supply voltage from 1.8 V to 5.5 V, and the M24C02-F can be accessed either with a su
Key features
- Compatible with |²C bus modes: 400 kHz, 100 kHz
- Memory array: 1 Kbit (128 bytes) of EEPROM, 2 Kbit (256 bytes) of EEPROM
- Page size: 16 byte
- Single supply voltage: M24C01/02-W: 2.5V to 5.5V; M24C01/02-R: 1.8 V to 5.5V; M24C02-F: 1.7 V to 5.5 V (full temperature range) and 1.6 V to 1.7 V (limited temperature range)
- Write: Byte Write within 5 ms, Page Write within 5 ms
- Operating temperature range: from -40 ℃ up to +85 ℃
- Random and sequential Read modes
- Write protect of the whole memory array
- Enhanced ESD/Latch-Up protection
- More than 4 million Write cycles
- More than 200-years data retention
Alternatives
Similar parts — check the datasheet before substituting.
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