MX1616H

This product adopts an H-bridge circuit topology with high-reliability power transistor process technology, making it particularly suitable for driving inductive loads such as coils and motors. The circuit integrates N-channel and P-channel power MOSFETs internally, with an operating voltage range of 2V to 8.6V. Under conditions of 27°C, VDD = 6.5V, and both channels operating simultaneously, Channel 1 delivers a maximum continuous output current of 1.3A and a maximum peak output current of 3A; Channel 2 delivers a maximum continuous output current of 1.3A and a maximum peak output current of 3A. As a power device, this circuit inherently exhibits a certain on-resistance, and its heat dissipation is closely related to load current, power MOSFET on-resistance, and ambient temperature. The circuit incorporates an on-chip temperature sensing circuit that continuously monitors the internal junction temperature. When the internal chip temperature exceeds the set threshold, a power MOSFET shutdown signal is generated to cut off the load current, preventing sustained temperature rise caused by abnormal operating conditions that could otherwise lead to serious safety hazards such as smoke or fire from the plastic package. The built-in thermal hysteresis circuit ensures that control of the power MOSFETs is only resumed after the circuit has recovered to a safe operating temperature.

Applications

• Toy motor drive powered by 2–4 AA/AAA dry cell batteries
• Toy motor drive powered by 2–5 NiMH/NiCd rechargeable batteries
• Motor drive powered by 1–2 lithium cells

Key features

• Low standby current (< 0.1uA)
• Low on-resistance MOSFET power switch designed with MOS process; Channel 1: 1.6A, on-resistance 0.4Ω; Channel 2: 1.6A, on-resistance 0.4Ω
• Low input current with integrated ~15K pull-down resistor to GND; average input current 200uA with 3V drive signal
• Built-in thermal shutdown protection circuit with hysteresis (TSD)
• ESD rating: 4KV (HBM)