MX35LF1GE4AB-Z4I
1Gbit 2.7V~3.6V 104MHz SPI WSON-8-EP(6x8) Memory RoHS
Serial NAND Flash Memory
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
8,920 in stock
#C402160
Stock & price checked 6 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 40+ | ₹1,044.11 | ₹41,764.40 |
| 400+ | ₹889.84 | ₹3,55,936.00 |
| 960+ | ₹795.74 | ₹7,63,910.40 |
| 3,840+ | ₹716.87 | ₹27,52,780.80 |
40 × ₹1,044.11
₹41,764.40
excl. GST
₹49,281.99 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 480 per tray
MX35LF1GE4AB-Z4I
₹41,764.40 for 40 + GST
Specifications
- Operating Temperature
- -40℃~+85℃
- Features
- Read buffer function;Write enable latch;Software reset function;ECC error correction function;Software write protection function;Hardware write protection function;OTP region write protection and lock function;Bad block management function
- Memory Size
- 1Gbit
- Voltage - Supply
- 2.7V~3.6V
- Program / Erase Cycles
- 100,000 cycles
- Clock Frequency
- 104MHz
- Data Retention - TDR (Year)
- 10 years
- Block Erase Time(tBE)
- 1ms
- Page Programming Time (Tpp)
- 600us
- Standby Supply Current
- 50uA
- Interface
- SPI
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- 3A991B1A
- Packaging
- Tray
- Standard pack
- 480 / Tray
- Sold per
- Piece
- Minimum order
- 40 (multiples of 40)
- Unit weight
- 6.75 g
Overview
The MX35LFxGE4AB is a 1Gb/2Gb SLC NAND Flash memory device with Serial interface. The memory array of this device adopted the same cell architecture as the parallel NAND, however implementing the industry standard serial interface. An internal 4-bit ECC logic is implemented in the chip, which is enabled by default. The internal ECC can be disabled or enabled again by command. When the internal 4-bit ECC logic is disabled, the host side needs to handle the 4-bit ECC by host micro controller.
Key features
- 1Gb/2Gb SLC NAND Flash - Bus: x4 - Page size: (2048 + 64) byte - Block size: (128K + 4K) byte
- Fast Read Access - Supports Random data read out by x1 x2 & x4 modes, (1-1-1,1-1-2, 1-1-4)
- Latency of array to register: 25us
- Frequency: 104MHz
- Page Program Operation - Page program time: 300us (typ)
- Block Erase Operation - Block erase time: 1ms (typ.)
- Single Voltage Operation: - VCC: 2.7 to 3.6V
- BP bits for block group protection
- Low Power Dissipation - Max 30mA Active current (Read/Program/Erase)
- Sleep Mode - 50uA (Max) standby current
- High Reliability - Program / Erase Endurance: Typical 100K cycles (with internal 4-bit ECC per (512+16) Byte - Data Retention: 10 years
- Wide Temperature Operating Range -40℃ to +85℃
- Package: 1) 8-WSON (8x6mm) for 1Gb 2)16-SOP (300mil) for 2Gb
- All packaged devices are RoHS Compliant and Halogen-free.
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
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