MX35LF1GE4AB-Z4ITR
1Gbit 2.7V~3.6V 104MHz SPI WSON-8(6x8) Memory RoHS
3V,1Gb-bit Serial NAND Flash Memory
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
5,536 in stock
#C2802769
Stock & price checked 6 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 4+ | ₹985.64 | ₹3,942.56 |
| 40+ | ₹858.83 | ₹34,353.20 |
| 120+ | ₹781.52 | ₹93,782.40 |
| 400+ | ₹716.59 | ₹2,86,636.00 |
4 × ₹985.64
₹3,942.56
excl. GST
₹4,652.22 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 4,000 per reel
MX35LF1GE4AB-Z4ITR
₹3,942.56 for 4 + GST
Specifications
- Operating Temperature
- -40℃~+85℃
- Features
- Read buffer function;Write enable latch;Software reset function;ECC error correction function;Bad block management function;Hardware write protection function;OTP region write protection and lock function
- Memory Size
- 1Gbit
- Voltage - Supply
- 2.7V~3.6V
- Program / Erase Cycles
- 100,000 cycles
- Clock Frequency
- 104MHz
- Data Retention - TDR (Year)
- 10 years
- Block Erase Time(tBE)
- 1ms
- Page Programming Time (Tpp)
- 300us
- Standby Supply Current
- 50uA
- Interface
- SPI
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- ECCN
- 3A991b1a
- Packaging
- Tape & Reel (TR)
- Standard pack
- 4,000 / Reel
- Sold per
- Piece
- Minimum order
- 4 (multiples of 4)
- Unit weight
- 1 g
Overview
The MX35LF1GE4AB is a 1Gb SLC NAND Flash memory device with Serial interface. The memory array of this device adopted the same cell architecture as the parallel NAND; however implementing the industry standard serial interface. An internal 4-bit ECC logic is implemented in the chip, which is enabled by default. The internal ECC can be disabled or enabled again by command. When the internal 4-bit ECC logic is disabled, the host side needs to handle the 4-bit ECC by host micro controller.
Key features
- 1Gb SLC NAND Flash - Bus: x4 - Page size: (2048 + 64) byte - Block size: (128k + 4k) byte
- Supports Random data read out by x1/x2/x4 modes, (1-1-1,1-1-2, 1-1-4)
- Latency of array to register: 25us
- Frequency: 104MHz
- Page program time: 300us (typ)
- Block erase time: 1ms (typ.)
- Single Voltage Operation: VCC: 2.7 to 3.6V
- BP bits for block group protection
- Low Power Dissipation - Max 30mA Active current (Read/Program/Erase) - Sleep Mode - 50uA (Max) standby current
- High Reliability - Program / Erase Endurance: Typical 100K cycles (with internal 4-bit ECC per (512 + 16) Byte - Data Retention: 10 years
- Wide Temperature Operating Range -40°C to +85°C
- Package: 8-WSON (8x6mm)
- All packaged devices are ReHS Compliant and Halogen-free.
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
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