MX612E

This product adopts an H-bridge circuit architecture with high-reliability power transistor process technology, making it particularly suitable for driving inductive loads such as coils and motors. The circuit integrates N-channel and P-channel power MOSFETs internally, with an operating voltage range covering 2V to 9.6V. At 27°C with VDD = 6.5V, the maximum continuous output current reaches 1.5A and the maximum peak output current reaches 2.5A. This single-channel device is a power component with inherent on-resistance. Circuit heat dissipation is closely related to load current, power MOSFET on-resistance, and ambient temperature. The circuit incorporates a chip-level temperature detection circuit that monitors internal chip temperature in real time. When the internal chip temperature exceeds the set threshold (typical value 150°C), a power MOSFET shutdown signal is generated to cut off the load current, preventing continuous temperature rise caused by abnormal usage that could lead to serious safety hazards such as plastic package smoking or ignition. The built-in thermal hysteresis circuit ensures that control of the power MOSFETs is only permitted after the circuit has recovered to a safe temperature.

Applications

• Toy motor drive powered by 2–6 AA/AAA dry batteries
• Toy motor drive powered by 2–6 NiMH/NiCd rechargeable batteries
• Motor drive powered by 1–2 lithium batteries
• Electronic locks

Key features

• Low standby current (< 0.1uA)
• Low on-resistance MOSFET power switch designed with MOS process; 1200mA channel on-resistance 0.35Ω, 200mA channel on-resistance 0.31Ω
• VCC can be left floating under specific conditions — minimum input signal high-level voltage greater than 2.4V
• Low input current with integrated ~15K pull-down resistor to ground; VCC connected normally: average 200uA input current at 3V drive signal; VCC floating: average 350uA input current at 3V drive signal
• Built-in thermal shutdown protection circuit with hysteresis (TSD)
• ESD rating: 3KV (HBM)