NSG20652Q

This device is a three-phase high-voltage power MOSFET and IGBT gate driver capable of simultaneously driving the gates of both high-side and low-side power transistors. Its floating channel drive design supports bus voltages up to 250V. The device outputs feature strong drive capability, with source and sink currents of 1A and 1.4A respectively. When the shutdown input is low, both high-side and low-side outputs are turned off simultaneously. Internal shoot-through protection and dead-time circuitry prevent both transistors from conducting at the same time, further reducing switching losses. The UVLO function ensures both driver outputs remain low when the supply voltage is below the operating threshold. The device integrates a bootstrap diode to minimize external peripheral components.

Applications

• Motor drive

Key features

• Floating channel for bootstrap operation
• Maximum operating voltage up to 250V
• Gate drive voltage range 5V~20V
• Compatible with 3.3V/5V input logic
• dVs/dt immunity up to ±50 V/ns
• Vs negative bias capability down to -9V
• Shutdown input, low level simultaneously disables both high-side and low-side outputs
• Input/output in-phase
• Turn-on/turn-off propagation delay Ton/Toff = 150ns/150ns, matched high-side and low-side delay
• Shoot-through protection, dead time 200ns
• High-side and low-side UVLO, UVLO positive threshold 4.5V, UVLO negative threshold 4.3V
• Output source/sink current capability: 1A/1.4A
• Operating temperature range -40°C~125°C
• Integrated bootstrap diode
• RoHS compliant
• QFN24 package