NSG2113N

NSG2113N is a high-voltage, high-speed power MOSFET high- and low-side driver IC, utilizing a high-low voltage compatible process to integrate both high-side and low-side gate drive circuits in a single chip. It features independent high-side and low-side signal transmission channels. The logic input levels of NSG2113N are compatible with CMOS or LSTTL logic output levels as low as 3.3V. The outputs are capable of high-current pulse drive, and the floating channel can be used to drive high-side N-channel power MOSFETs, with a maximum operating voltage of 700V on the floating ground channel. NSG2113N integrates internal high- and low-side shutdown logic for on/off control under fault conditions. NSG2113N is available in a SOP16 package and operates over a temperature range of -40°C to 125°C.

Applications

• General-purpose inverters
• Half-bridge and full-bridge converters in AC and DC power supplies
• High-density switching power supplies for servers, telecom, IT, and industrial infrastructure
• Solar inverters, motor drives, and UPS

Key features

• Floating channel for bootstrap operation
• Maximum operating voltage up to 700V, compatible with 3.3V, 5V, and 15V input logic
• dVs/dt immunity up to ±50V/nsec
• Vs negative bias capability down to -9V
• Gate drive voltage range 10V - 20V
• Wide temperature range -40~125°C
• Integrated undervoltage lockout
• Cycle-by-cycle edge-triggered shutdown logic
• In-phase input/output logic with ±5V offset from power ground
• Turn-on/turn-off propagation delay: Ton/Toff = 130ns/130ns
• High- and low-side delay matching
• Gate drive current capability: source/sink = 4.0A/4.0A
• High- and low-side UVLO circuits
• UVLO positive-going threshold 8.9V
• UVLO negative-going threshold 8.2V
• RoHS-compliant SOP16 package