MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
SIHB22N60E-E3-VB
N-Channel 650V 13A 208W Surface Mount TO-263(D2Pak)
TO-263(D2PAK)ROHS CompliantActive
MOSFET N-CH 650V 13A TO-263(D2PAK)
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- SIHB22N60E-E3-VB
- Store part #
- C7524974
- Package / case
- TO-263(D2PAK)
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
45 in stock
#C7524974
Stock & price checked 42 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹457.89 | ₹457.89 |
| 10+ | ₹402.28 | ₹4,022.80 |
| 50+ | ₹299.98 | ₹14,999.00 |
| 100+ | ₹264.35 | ₹26,435.00 |
| 500+ | ₹248.27 | ₹1,24,135.00 |
| 1,000+ | ₹241.33 | ₹2,41,330.00 |
1 × ₹457.89
₹457.89
excl. GST
₹540.31 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
SIHB22N60E-E3-VB
₹457.89 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 650V
- Output Capacitance(Coss)
- 105pF
- Current - Continuous Drain(Id)
- 13A
- Ciss-Input Capacitance
- 2.322nF
- Pd - Power Dissipation
- 208W
- Reverse Transfer Capacitance (Crss)
- 4pF
- RDS(on)
- 190mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 106nC@10V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- Moisture sensitivity
- MSL 1 (unlimited)
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 1.5 g
Same category
