MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
MSKSEMIDatasheet (PDF)
SIS413DN-T1-GE3-MS
21.5W 30V 55A 8.5mΩ@10V 1 P-Channel P-Channel DFN-8L(3x3) Single FETs, MOSFETs
DFN-8L(3x3)RoHSActive
- Manufacturer
- MSKSEMI
- Manufacturer part #
- SIS413DN-T1-GE3-MS
- Store part #
- C51908843
- Package / case
- DFN-8L(3x3)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
415 in stock
#C51908843
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 5+ | ₹43.74 | ₹218.70 |
| 50+ | ₹35.62 | ₹1,781.00 |
| 150+ | ₹32.14 | ₹4,821.00 |
| 500+ | ₹27.80 | ₹13,900.00 |
| 2,500+ | ₹22.45 | ₹56,125.00 |
| 5,000+ | ₹21.29 | ₹1,06,450.00 |
5 × ₹43.74
₹218.70
excl. GST
₹258.07 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
SIS413DN-T1-GE3-MS
₹218.70 for 5 + GST
Specifications
- Output Capacitance(Coss)
- 346pF
- Ciss-Input Capacitance
- 2.8nF
- Pd - Power Dissipation
- 21.5W
- Drain to Source Voltage
- 30V
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 55A
- Reverse Transfer Capacitance (Crss)
- 319pF
- RDS(on)
- 8.5mΩ@10V
- Number
- 1 P-Channel
- Gate Charge(Qg)
- 30nC
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 1.5V
- Type
- P-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 5 (multiples of 5)
- Unit weight
- 0.102 g
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