SST39VF400A-70-4I-MAQE

The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF200A/400A/800A write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF200A/400A/800A write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pinouts for x16 memories. Featuring high-performance Word-Program, the SST39LF200A/400A/800A and SST39VF200A/400A/ 800A devices provide a typical Word-Program time of 14 µsec. The devices use Toggle Bit or Data# Polling to detect the completion of the Program or Erase operation. To protect against inadvertent write, they have on-chip hardware and software data protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with a guaranteed typical endurance of 100,000 cycles. Data retention is rated at greater than 100 years. The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, they significantly improve performance and reliability, while lowering power consumption. They inherently use less energy during Erase and Program than alternative flash technologies. When programming a flash device, the total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. These devices also improve flexibility while lowering the cost for program, data, and configuration storage applications. The SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/Program cycles that have occurred. Therefore the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Program times increase with accumulated Erase/Program cycles.

Key features

• Organized as 128K x16 / 256K x16 / 512K x16
• Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF200A/400A/800A – 2.7-3.6V for SST39VF200A/400A/800A
• Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention
• Low Power Consumption (typical values at 14 MHz) – Active Current: 9 mA (typical) – Standby Current: 3 μA (typical)
• Sector-Erase Capability – Uniform 2 KWord sectors
• Block-Erase Capability – Uniform 32 KWord blocks
• Fast Read Access Time – 55 ns for SST39LF200A/400A/800A – 70 ns for SST39VF200A/400A/800A
• Latched Address and Data
• Fast Erase and Word-Program
• Sector-Erase Time: 18 ms (typical)
• Block-Erase Time: 18 ms (typical)
• Chip-Erase Time: 70 ms (typical)
• Word-Program Time: 14 μs (typical)
• Chip Rewrite Time: 2 seconds (typical) for SST39LF/VF200A 4 seconds (typical) for SST39LF/VF400A 8 seconds (typical) for SST39LF/VF800A
• Automatic Write Timing – Internal VPP Generation
• End-of-Write Detection – Toggle Bit – Data# Polling
• JEDEC Standard – Flash EEPROM Pinouts and command sets
• Packages Available – 48-lead TSOP (12mm x 20mm) – 48-ball TFBGA (6mm x 8mm) – 48-ball WFBGA (4mm x 6mm) – 48-bump XFLGA (4mm x 6mm) - 4 and 8Mbit
• All non-Pb (lead-free) devices are RoHS compliant