TF2113M-TR

TF2113M is a high-voltage, high-speed power MOSFET high- and low-side gate driver IC, fabricated using a high-low voltage compatible process that enables monolithic integration of both high-side and low-side gate drive circuits. It features independent high-side and low-side channels with logic input levels compatible with CMOS or LSTTL outputs as low as 3.3V. The outputs provide high-current pulse capability, and the floating channel supports driving of high-side N-channel power MOSFETs, with a maximum floating supply voltage of 700V. An integrated high- and low-side shutdown logic allows on/off control under fault conditions. Available in a wide-body SOIC16(W) package, the device operates over a temperature range of -40°C to 125°C.

Applications

• General-purpose inverters
• Half-bridge and full-bridge converters in AC and DC power supplies
• High-density switching power supplies for servers, telecom, IT, and industrial infrastructure
• Solar inverters, motor drives, and UPS

Key features

• Floating channel for bootstrap operation
• Maximum operating voltage up to 700V
• Compatible with 3.3V, 5V, and 15V input logic
• dVs/dt immunity up to ±50V/nsec
• Vs negative bias capability down to -9V
• Gate drive voltage range 10V - 20V
• Wide temperature range -40~125°C
• Integrated UVLO function
• Cycle-by-cycle edge-triggered shutdown logic
• Input/output in-phase
• Logic and power ground offset ±5V
• Propagation delay characteristics: Ton/Toff = 130ns/130ns, matched high/low side delay
• Drive current capability: source/sink = 4.0A/4.0A
• High- and low-side UVLO: UVLO positive threshold 8.9V, UVLO negative threshold 8.2V
• RoHS compliant