MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
26,12,850 in stock
TOSHIBADatasheet (PDF)
TK58E06N1,S1X(S
60V 105A 110W 4.4mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs
TO-220RoHSActive
N-channel MOS(U-MOSVII-H)
- Manufacturer
- TOSHIBA
- Manufacturer part #
- TK58E06N1,S1X(S
- Store part #
- C5555030
- Package / case
- TO-220
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
9 in stock
#C5555030
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹91.27 | ₹91.27 |
| 10+ | ₹74.39 | ₹743.90 |
| 50+ | ₹66.06 | ₹3,303.00 |
| 100+ | ₹57.72 | ₹5,772.00 |
| 500+ | ₹52.52 | ₹26,260.00 |
| 1,000+ | ₹50.02 | ₹50,020.00 |
1 × ₹91.27
₹91.27
excl. GST
₹107.70 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 50 per tube
TK58E06N1,S1X(S
₹91.27 for 1 + GST
Specifications
- Drain to Source Voltage
- 60V
- Output Capacitance(Coss)
- 1.12nF
- Current - Continuous Drain(Id)
- 105A
- Ciss-Input Capacitance
- 3.4nF
- Pd - Power Dissipation
- 110W
- Reverse Transfer Capacitance (Crss)
- 45pF
- RDS(on)
- 4.4mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 46nC@10V
- Gate Threshold Voltage (Vgs(th))
- 2V;4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 1 (unlimited)
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 1 g
Same category
