UCC27531QDBVRQ1

The UCC27531-Q1 is a single-channel, high-speed gate driver capable of effectively driving MOSFET and IGBT power switches with peak currents of up to 2.5A source and 5A sink (asymmetric drive). The strong sink capability in the asymmetric drive enhances immunity to parasitic Miller turn-on effects. The UCC27531-Q1 also features a split-output configuration, in which gate drive current is sourced from the OUTH pin and sunk through the OUTL pin. This unique pin arrangement allows users to employ independent turn-on and turn-off resistors on the OUTH and OUTL pins respectively, enabling easy control of switching slew rate. The driver features rail-to-rail drive capability with a typical propagation delay of only 17ns. The UCC27531-Q1 input thresholds are based on TTL- and CMOS-compatible low-voltage logic, which are fixed and independent of the VDD supply voltage. A typical hysteresis of 1V provides excellent noise immunity. The driver features an EN pin supporting fixed TTL-compatible thresholds. EN is internally pulled up; pulling EN low disables the driver, while leaving it open enables normal operation. The EN pin can be used as an additional input with the same functionality as the IN pin. Leaving the driver's input pin open will hold the output low. The driver's logic operation is shown in the application diagrams, timing diagrams, and input/output logic truth tables. Internal circuitry on the VDD pin provides an UVLO function, which holds the output low until the VDD supply voltage is within the operating range. The UCC27531-Q1 driver is available in a 6-pin standard SOT-23 (DBV) package. The device operates over a wide temperature range of -40°C to 140°C.

Applications

• Automotive
• Switched-mode power supplies
• DC-to-DC converters
• Solar inverters
• Motor control
• Uninterruptible power supplies (UPS)
• Hybrid electric vehicle (HEV) and electric vehicle (EV) chargers
• Home appliances
• Renewable energy power conversion
• SiC FET converters

Key features

• Qualified for automotive applications with the following AEC-Q100 results: Device Temperature Grade 1; Device Human Body Model (HBM) ESD Classification Level H2; Device Charged Device Model (CDM) ESD Classification Level C4B
• Low-cost gate driver (optimal solution for driving FETs and IGBTs)
• Excellent discrete transistor pair drive replacement (simplified interface with controllers)
• TTL and CMOS compatible input logic thresholds (independent of supply voltage)
• Split output option for independent turn-on and turn-off current adjustment
• Inverting and non-inverting input configurations
• Enabled by fixed TTL-compatible threshold; 2.5A source and 2.5A or 5A sink peak drive current at 18V VDD
• Wide VDD range from 10V to 35V
• Input and enable pins capable of withstanding DC voltages up to 5V below ground
• Output held low when input is floating or during VDD UVLO
• Fast propagation delay (17ns typical)
• Fast rise and fall times (15ns and 7ns typical at 1800pF load)
• UVLO
• Usable as high-side or low-side driver (with appropriate bias and signal isolation design)
• Low-cost, space-saving 6-pin DBV (SOT-23) package option
• Operating temperature range: -40°C to 140°C