W9812G6KB-6I

W9812G6KB is a high-speed synchronous dynamic random access memory (SDRAM), organized as 2M words x 4 banks x 16 bits. This device delivers a data bandwidth of up to 166M words per second. For different application, W9812G6KB is sorted into the following speed grades: -6, -6I and -6J. The -6, -6I and -6J grade parts can run up to 166MHz/CL3 (The -6I industrial grade which is guaranteed to support -40℃~85℃, the -6J industrial plus grade which is guaranteed to support -40℃~105℃). Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated by the SDRAM internal counter in burst operation. Random column read is also possible by providing its address at each clock cycle. The multiple bank nature enables interleaving among internal banks to hide the precharging time. By having a programmable Mode Register, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance. W9812G6KB is ideal for main memory in high performance applications.

Key features

• 3.3V±0.3V Power Supply
• Up to 166 MHz Clock Frequency
• 2,097,152 Words x 4 Banks x 16 bits organization
• Self Refresh Mode: Standard and Low Power
• CAS Latency: 2 and 3
• Burst Length: 1, 2, 4, 8 and Full Page
• Sequential and Interleave Burst
• Burst Read, Single Writes Mode
• Byte Data Controlled by LDQM, UDQM
• Power Down Mode
• Auto-precharge and Controlled Precharge
• 4K Refresh Cycles/64 mS, @ -40℃ ≤ TCASE ≤ 85℃
• 4K Refresh Cycles/16 mS, @ 85℃ < TCASE ≤ 105℃
• Interface: LVTTL
• Packaged in TFBGA 54 Ball (8x8 mm²), using lead free material