XJNG2102D

XJNG2102D is a high-voltage, high-speed, single-phase high- and low-side power MOSFET and IGBT gate driver IC. It integrates independent high-side and low-side referenced output channels. Fabricated using a high-voltage compatible process, the device integrates both high-side and low-side gate drive circuits on a single chip. The logic input thresholds are compatible with CMOS or LSTTL logic output levels down to 3.3V. The output stage features high-current pulse drive capability with integrated shoot-through prevention dead-time logic. The floating channel enables driving of high-side N-channel power MOSFETs at operating voltages up to 250V. The device is offered in an SOP8 package with an operating temperature range of -40℃ to 125℃.

Applications

• Motor control
• Air conditioners / washing machines

Key features

• Floating channel supporting bootstrap operation
• Maximum operating voltage up to +250V
• Compatible with 3.3V, 5V, and 15V input logic
• dVs/dt immunity up to ±50 V/ns
• Vs negative bias capability down to -9V
• Gate drive voltage range from 6V to 20V
• Integrated UVLO: VCC UVLO positive threshold 5.5V, negative threshold 5V; VBS UVLO threshold 3.6V
• Integrated cross-conduction prevention dead-time logic, dead time set to 200ns
• Propagation delay characteristics: turn-on/turn-off propagation delay Ton/Toff = 150ns/140ns, delay matching 50ns
• Wide operating temperature range: -40°C ~ 125°C
• Output stage source/sink current capability 1.2A/1.5A
• RoHS compliant
• SOP8 package